Nogami, Jun

Nogami, Jun

Jun Nogami | BASc (Toronto), MASc (Stanford), PhD (Stanford), FAAAS, PEng
Professor & Chair

Office: WB 140
T: 416.946.0684

Schedule an appointment with the Chair:
T: 416.978.3012

Research Group: Nanostructured Growth & Characterization Laboratory

Honours & Awards

  • Fellow, The School of Engineering at The University of Tokyo, 2018
  • Fellow, American Academy for the Advancement of Science (FAAAS), 2010

Professional Memberships

  • American Association for the Advancement of Science
  • American Vacuum Society
  • Materials Research Society (MRS)

Research Areas

Integration of Top Down and Bottom Up Nanofabrication

Many interesting nanostructures can arise during epitaxial growth of thin film electronic materials. Self assembly of these nanostructures represents a “bottom up” approach to nanofabrication. At the same time, integration of such nanostructures into devices will require electrical connections, as well as proximal gate electrodes, etc, which are generally made with lithographic techniques: a “top down” fabrication technique. We are particularly interested in nanostructures that are grown in ultra high vacuum (UHV) on atomically pristine substrates. We are developing “top down” nanofabrication techniques that are compatible with the UHV growth methods used to create our nanostructures. Current research in this area is focusing on the ultimate limits of nanostencilling in UHV.

Self Assembly of Nanostructures and Nanowires for Electronic Applications

Many low dimensional structures arise from self-assembly when depositing metals onto semiconductor surfaces. Some of these, such as rare earth silicide nanowires, have potential application in nanodevices, and nanoscale sensors. Control over geometry and feature size is essential for application of these nanostructures.

Surface Structure Studies using Scanned Probe Microscopy

Much of our research involves the measurement of atomic surface structure and surface topography using both Scanning Tunneling Microscopy in ultra high vacuum, and atomic force microscopy in air. Many of our past studies on surface atomic structure have yielded insight into the fundamental mechanisms of the growth of metals on silicon surfaces.

Select Publications

Gangfeng Ye, M. A. Crimp and J. Nogami, “Self-Assembled Gd Silicide Nanostructures Grown on Si(001)” J. App. Phys. 105, 104304 (2009)

A. Linklater and J. Nogami, “Defining nanoscale metal features on an atomically clean silicon surface with a stencil” Nanotechnology, 19, 285302 (2008)

G. Ye, M. A. Crimp, and J. Nogami, “Crystallographic study of self-assembled dysprosium silicide nanostructures on Si(001)” Phys. Rev. B 74, 033104 (2006)

M.A. Albao, M.M.R. Evans, J. Nogami, D. Zorn, M.S. Gordon, and J.W. Evans, “Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)” Phys. Rev. B 72, 035426 (2005)

B.Z. Liu and J. Nogami, “Growth of parallel rare earth silicide nanowire arrays on vicinal Si(001)”Nanotechnology 14 (8), 873-877 (2003)

J. Nogami, B.Z. Liu, M.V. Katkov, C. Ohbuchi, and Norman O. Birge, “Self-Assembled rare earth silicide nanowires on Si(001)” Phys. Rev. B 63, 233305 (2001)